, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 powermos transistor logic level fet BUK553-60a/b general description n-channel enhancement mode logic level field-effect power transistor in a plastic envelope. the device is intended for use in switched mode power supplies (smps), motor control, welding, dc/dc and ac/dc converters, and in automotive and general purpose switching applications. pinning - to220ab quick reference data pin 1 2 3 tab description gate drain source drain symbol vds id p,o, rds(on) parameter BUK553 drain-source voltage drain current (dc) total power dissipation junction temperature drain-source on-state resistance; vgs = 5 v max. -60a 60 21 75 175 0.085 max. -60b 60 20 75 175 0.10 unit v a w ?c i pin configuration symbol 2 limiting values limiting values in accordance with the absolute maximum system (iec 134) symbol vds vdgr vgs vgsm id id 'dm p,o, ^ parameter drain-source voltage drain-gate voltage gate-source voltage non-repetitive gate-source voltage drain current (dc) drain current (dc) drain current (pulse peak value) total power dissipation storage temperature junction temperature conditions rgs = 20 k2 tp < 50 ^s tmb= 25 'c tmb=100c tmb = 25 -c tmb = 25 'c min. -55 max. 60 60 15 20 -60a 21 15 84 -60b 20 14 80 75 175 175 unit v v v v a a a w ?c ?c thermal resistances symbol "mb j-mb "th j-a parameter thermal resistance junction to mounting base thermal resistance junction to ambient conditions min. - typ. 60 max. 2.0 unit k/w k/w
'lieu tss-ml-donauchoi \pioaudti., line. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: 973/467-8519 powermos transistor logic level fet BUK553-60a/b static characteristics tmb = 25 c unless otherwise specified symbol v(br)dss ?es(to) idss 'dss igss f"ds(on) parameter drain-source breakdown voltage gate threshold voltage zero gate voltage drain current zero gate voltage drain current gate source leakage current drain-source on-state resistance conditions vgs = 0 v; id = 0.25 ma vds = vgs; id = 1 ma vds = 60 v; vgs = 0 v; t = 25 c vds = 60 v; vgs = 0 v; t =125 c vgs = 15v;vds = ov vgs = 5 v; BUK553-60a id = 10a BUK553-60b min. 60 1.0 - - - - - typ. - 1.5 1 0.1 10 0.075 0.08 max. . 2.0 10 1.0 100 0.085 0.10 unit v v ha ma na ii ii dynamic characteristics tmb = 25 c unless otherwise specified symbol 9fs cjss c-oss crss 'don t, tdoff t, ld ld ls parameter forward transconductance input capacitance output capacitance feedback capacitance turn-on delay time turn-on rise time turn-off delay time turn-off fall time internal drain inductance internal drain inductance internal source inductance conditions vds = 25v;id = 10a vgs = 0 v; vds = 25 v; f = 1 mhz vdd = 30 v; id = 3 a; vgs = 5 v; rgs = 50 ft; rgen = 50 q measured from contact screw on tab to centre of die measured from drain lead 6 mm from package to centre of die measured from source lead 6 mm from package to source bond pad min. 7 - - - typ. 10 700 240 130 20 95 80 65 3.5 4.5 7.5 max. - 825 350 160 30 120 110 85 - unit s pf pf pf ns ns ns ns nh nh nh quality semi-conductors
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